High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics

Shi Jin Ding; Hang Hu; H. F. Lim; S. J. Kim; X. F. Yu; Chunxiang Zhu; M. F. Li; Byung Jin Cho; Daniel S.H. Chan; Subhash C. Rustagi; M. B. Yu; Albert Chin; Dim Lee Kwong

doi:10.1109/LED.2003.820664

High-Performance MIM Capacitor Using ALD High-κ HfO ₂-Al₂O₃ Laminate Dielectrics

Shi Jin Ding^*, Hang Hu, H. F. Lim, S. J. Kim, X. F. Yu, Chunxiang Zhu, M. F. Li, Byung Jin Cho, Daniel S.H. Chan, Subhash C. Rustagi, M. B. Yu, Albert Chin, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO₂-Al ₂O₃ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m² from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10^-8 A/cm² at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V², temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO₂-Al₂O ₃ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.

Original language	English
Pages (from-to)	730-732
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	24
Issue number	12
DOIs	https://doi.org/10.1109/LED.2003.820664
State	Published - Dec 2003

Keywords

Atomic layer deposition (ALD)
HfO-AlO laminate
High-κ
Metal-insulator-metal (MIM) capacitor

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10.1109/LED.2003.820664

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@article{176335fc28e14a129fba0786377b04fc,

title = "High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics",

abstract = "For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.",

keywords = "Atomic layer deposition (ALD), HfO-AlO laminate, High-κ, Metal-insulator-metal (MIM) capacitor",

author = "Ding, {Shi Jin} and Hang Hu and Lim, {H. F.} and Kim, {S. J.} and Yu, {X. F.} and Chunxiang Zhu and Li, {M. F.} and Cho, {Byung Jin} and Chan, {Daniel S.H.} and Rustagi, {Subhash C.} and Yu, {M. B.} and Albert Chin and Kwong, {Dim Lee}",

year = "2003",

month = dec,

doi = "10.1109/LED.2003.820664",

language = "English",

volume = "24",

pages = "730--732",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics

AU - Ding, Shi Jin

AU - Hu, Hang

AU - Lim, H. F.

AU - Kim, S. J.

AU - Yu, X. F.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Cho, Byung Jin

AU - Chan, Daniel S.H.

AU - Rustagi, Subhash C.

AU - Yu, M. B.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003/12

Y1 - 2003/12

N2 - For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.

AB - For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.

KW - Atomic layer deposition (ALD)

KW - HfO-AlO laminate

KW - High-κ

KW - Metal-insulator-metal (MIM) capacitor

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U2 - 10.1109/LED.2003.820664

DO - 10.1109/LED.2003.820664

M3 - Article

AN - SCOPUS:9144263061

SN - 0741-3106

VL - 24

SP - 730

EP - 732

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

ER -

High-Performance MIM Capacitor Using ALD High-κ HfO ₂-Al₂O₃ Laminate Dielectrics

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