High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO 2 gate stack structure

Ming wen Ma, Tien-Sheng Chao*, Chun Jung Su, Woei Cherng Wu, Kuo Hsing Kao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO 2 gate stack is demonstrated for the first time. The devices of low threshold voltage V TH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μ FE ∼240 cm 2 /V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO 2 gate dielectric with the effective oxide thickness of 5.12 nm.

Original languageEnglish
Pages (from-to)592-594
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
StatePublished - 1 Jun 2008

Keywords

  • High-κ
  • Low-temperature poly-Si thin-film transistor (LTPS-TFT)
  • Metal gate
  • Metal-induced lateral crystallization (MILC)

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