In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO 2 gate stack is demonstrated for the first time. The devices of low threshold voltage V TH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μ FE ∼240 cm 2 /V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO 2 gate dielectric with the effective oxide thickness of 5.12 nm.
- Low-temperature poly-Si thin-film transistor (LTPS-TFT)
- Metal gate
- Metal-induced lateral crystallization (MILC)