High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO 2 gate stack structure

Ming wen Ma; Tien-Sheng Chao; Chun Jung Su; Woei Cherng Wu; Kuo Hsing Kao; Tan Fu Lei

doi:10.1109/LED.2008.921208

High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO ₂ gate stack structure

Ming wen Ma, Tien-Sheng Chao^*, Chun Jung Su, Woei Cherng Wu, Kuo Hsing Kao, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO₂ gate stack is demonstrated for the first time. The devices of low threshold voltage V_TH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μ_FE ∼240 cm²/V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO₂ gate dielectric with the effective oxide thickness of 5.12 nm.

Original language	English
Pages (from-to)	592-594
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/LED.2008.921208
State	Published - Jun 2008

Keywords

High-κ
Low-temperature poly-Si thin-film transistor (LTPS-TFT)
Metal gate
Metal-induced lateral crystallization (MILC)

Access to Document

10.1109/LED.2008.921208

Cite this

@article{d59717bd9a104042ae29f6ad80943e55,

title = "High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO 2 gate stack structure",

abstract = "In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μFE ∼240 cm2/V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm.",

keywords = "High-κ, Low-temperature poly-Si thin-film transistor (LTPS-TFT), Metal gate, Metal-induced lateral crystallization (MILC)",

author = "Ma, {Ming wen} and Tien-Sheng Chao and Su, {Chun Jung} and Wu, {Woei Cherng} and Kao, {Kuo Hsing} and Lei, {Tan Fu}",

year = "2008",

month = jun,

doi = "10.1109/LED.2008.921208",

language = "English",

volume = "29",

pages = "592--594",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO 2 gate stack structure

AU - Ma, Ming wen

AU - Chao, Tien-Sheng

AU - Su, Chun Jung

AU - Wu, Woei Cherng

AU - Kao, Kuo Hsing

AU - Lei, Tan Fu

PY - 2008/6

Y1 - 2008/6

N2 - In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μFE ∼240 cm2/V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm.

AB - In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and TaN/HO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ∼0.095 V, excellent subthreshold swing S.S. ∼83 mV/dec., and high field-effect mobility μFE ∼240 cm2/V ·s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm.

KW - High-κ

KW - Low-temperature poly-Si thin-film transistor (LTPS-TFT)

KW - Metal gate

KW - Metal-induced lateral crystallization (MILC)

UR - http://www.scopus.com/inward/record.url?scp=44849131892&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.921208

DO - 10.1109/LED.2008.921208

M3 - Article

AN - SCOPUS:44849131892

SN - 0741-3106

VL - 29

SP - 592

EP - 594

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 6

ER -

High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO ₂ gate stack structure

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this