High-performance metal-ferroeletric-semiconductor nanosheet line tunneling field effect transistors with strained sige

Narasimhulu Thoti, Yiming Li*, Sekhar Reddy Kola, Seiji Samukawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Nanosheet line tunnel-field effect transistors (NLTFETs) are for the first time proposed by utilizing the advantages of ferroelectricity through HZO materials. Three ferroelectric line TFETs have been proposed and investigated. Among these, the metal-ferroelectric-semiconductor (MFS) structure has shown superior performance than the other two variants. The factors of electric field and electron barrier tunneling have been addressed to govern the performance of these structures. In addition, the effects of the ferroelectric (Hf0.5 Zr0.5 O2) thickness (tFE) and the dielectric constant have been discussed. The MFS NLTFETs can effectively utilize the advantages of ferroelectric than the other variants. High on-current of 175.6 μAμm and low off-current of 38.4 aA/ μm are achieved at tFE of 4 nm through proper utilization of gate-overlap on to the drain side. Furthermore, the proposed MFS structure successfully delivers low average and minimum subthreshold swings even at very thin tFE.

Original languageEnglish
Title of host publication2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages375-378
Number of pages4
ISBN (Electronic)9784863487635
DOIs
StatePublished - 23 Sep 2020
Event2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan
Duration: 3 Sep 20206 Oct 2020

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2020-September

Conference

Conference2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Country/TerritoryJapan
CityVirtual, Kobe
Period3/09/206/10/20

Keywords

  • And SiGe.
  • Hf0.5Zr0.5O2
  • MFS
  • Nanosheet line TFETs

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