High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications

Jing Yuan Wu; Ping Huang; Quang Ho Luc; Hua Lun Ko; Yung Chun Chiang; Hsiang Chan Yu; Mu Yu Chen; Edward Yi Chang

doi:10.1109/TNANO.2023.3303832

High Performance Inversion-Mode In_0.53Ga_0.47As FinFETs for Logic and RF Applications

Jing Yuan Wu, Ping Huang, Quang Ho Luc, Hua Lun Ko, Yung Chun Chiang, Hsiang Chan Yu, Mu Yu Chen, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

An inversion-mode In_0.53Ga_0.47As FinFET exhibiting a transition frequency (f_T) of 271 GHz and a maximum oscillation frequency (f_max) of 78 GHz at V_ds = 0.5 V is reported in this work. Simultaneously, the transconductance (g_m) of 2056 (μS/μm) and drain induced barrier lowering (DIBL) of 121 (mV/V) obtained were also exhibited. Moreover, a subthreshold swing (SS) of 86 and 97 (mV/dec) was obtained at V_ds = 0.05 and 0.5 V, respectively. These exceptional properties are the result of employing N₂ remote plasma treatment, enhancing the quality of high-k/III-V interface and carrier mobility. The fin structure contributes to good suppression of short channel effects (SCEs), and the superior transfer characteristics are due to the improved gate controllability. We also extracted an effective electron velocity (ν_eff) of 2.18 × 10⁷ (cm/s) by delay time analysis, providing a probable explanation for the obtained f_T performance. This work explicitly exhibits the potential of high-performance inversion-mode InGaAs FinFETs, positioning them as promising candidates for future high-frequency system applications.

Original language	English
Pages (from-to)	445-448
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	22
DOIs	https://doi.org/10.1109/TNANO.2023.3303832
State	Published - 2023

Keywords

FinFET
InGaAs
inversion channel layer
transition frequency

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10.1109/TNANO.2023.3303832

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title = "High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications",

abstract = "An inversion-mode In0.53Ga0.47As FinFET exhibiting a transition frequency (fT) of 271 GHz and a maximum oscillation frequency (fmax) of 78 GHz at Vds = 0.5 V is reported in this work. Simultaneously, the transconductance (gm) of 2056 (μS/μm) and drain induced barrier lowering (DIBL) of 121 (mV/V) obtained were also exhibited. Moreover, a subthreshold swing (SS) of 86 and 97 (mV/dec) was obtained at Vds = 0.05 and 0.5 V, respectively. These exceptional properties are the result of employing N2 remote plasma treatment, enhancing the quality of high-k/III-V interface and carrier mobility. The fin structure contributes to good suppression of short channel effects (SCEs), and the superior transfer characteristics are due to the improved gate controllability. We also extracted an effective electron velocity (νeff) of 2.18 × 107 (cm/s) by delay time analysis, providing a probable explanation for the obtained fT performance. This work explicitly exhibits the potential of high-performance inversion-mode InGaAs FinFETs, positioning them as promising candidates for future high-frequency system applications.",

keywords = "FinFET, InGaAs, inversion channel layer, transition frequency",

author = "Wu, {Jing Yuan} and Ping Huang and Luc, {Quang Ho} and Ko, {Hua Lun} and Chiang, {Yung Chun} and Yu, {Hsiang Chan} and Chen, {Mu Yu} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2023",

doi = "10.1109/TNANO.2023.3303832",

language = "English",

volume = "22",

pages = "445--448",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

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T1 - High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications

AU - Wu, Jing Yuan

AU - Huang, Ping

AU - Luc, Quang Ho

AU - Ko, Hua Lun

AU - Chiang, Yung Chun

AU - Yu, Hsiang Chan

AU - Chen, Mu Yu

AU - Chang, Edward Yi

PY - 2023

Y1 - 2023

N2 - An inversion-mode In0.53Ga0.47As FinFET exhibiting a transition frequency (fT) of 271 GHz and a maximum oscillation frequency (fmax) of 78 GHz at Vds = 0.5 V is reported in this work. Simultaneously, the transconductance (gm) of 2056 (μS/μm) and drain induced barrier lowering (DIBL) of 121 (mV/V) obtained were also exhibited. Moreover, a subthreshold swing (SS) of 86 and 97 (mV/dec) was obtained at Vds = 0.05 and 0.5 V, respectively. These exceptional properties are the result of employing N2 remote plasma treatment, enhancing the quality of high-k/III-V interface and carrier mobility. The fin structure contributes to good suppression of short channel effects (SCEs), and the superior transfer characteristics are due to the improved gate controllability. We also extracted an effective electron velocity (νeff) of 2.18 × 107 (cm/s) by delay time analysis, providing a probable explanation for the obtained fT performance. This work explicitly exhibits the potential of high-performance inversion-mode InGaAs FinFETs, positioning them as promising candidates for future high-frequency system applications.

AB - An inversion-mode In0.53Ga0.47As FinFET exhibiting a transition frequency (fT) of 271 GHz and a maximum oscillation frequency (fmax) of 78 GHz at Vds = 0.5 V is reported in this work. Simultaneously, the transconductance (gm) of 2056 (μS/μm) and drain induced barrier lowering (DIBL) of 121 (mV/V) obtained were also exhibited. Moreover, a subthreshold swing (SS) of 86 and 97 (mV/dec) was obtained at Vds = 0.05 and 0.5 V, respectively. These exceptional properties are the result of employing N2 remote plasma treatment, enhancing the quality of high-k/III-V interface and carrier mobility. The fin structure contributes to good suppression of short channel effects (SCEs), and the superior transfer characteristics are due to the improved gate controllability. We also extracted an effective electron velocity (νeff) of 2.18 × 107 (cm/s) by delay time analysis, providing a probable explanation for the obtained fT performance. This work explicitly exhibits the potential of high-performance inversion-mode InGaAs FinFETs, positioning them as promising candidates for future high-frequency system applications.

KW - FinFET

KW - InGaAs

KW - inversion channel layer

KW - transition frequency

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DO - 10.1109/TNANO.2023.3303832

M3 - Article

AN - SCOPUS:85167801608

SN - 1536-125X

VL - 22

SP - 445

EP - 448

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

ER -

High Performance Inversion-Mode In_0.53Ga_0.47As FinFETs for Logic and RF Applications

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Keywords

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