High-performance integration of copper interconnects with low-k hydrogen silsesquioxane employing deuterium plasma treatment

Po-Tsun Liu*, TC Chang, YL Yang, YF Cheng, JK Lee, FY Shih, E Tsai, G Chen, SM Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress. By applying deuterium plasma treatment to HSQ film, however, this degradation was alleviated. In addition, the phenomena of serious Cu penetration were not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis, even in the absence of diffusion barrier layers. This indicates that copper diffusion in low-k HSQ film can be effectively blocked by deuterium plasma post-treatment. Therefore, further improvement in RC reduction can be obtained due to the minimized thickness requirement for conventional barriers such as inorganic Si3N4 and metallic TaN layers.

Original languageEnglish
Title of host publicationINTERCONNECT AND CONTACT METALLIZATION FOR ULSI
EditorsGS Mathad, HS Rathore, Y Arita
PublisherElectrochemical Society Inc.
Pages251-260
Number of pages10
ISBN (Print)1-56677-254-0
StatePublished - Oct 1999
EventInternational Symposium on Interconnect and Contact Metallization for ULSI - HONOLULU
Duration: 17 Oct 199922 Oct 1999

Publication series

NameELECTROCHEMICAL SOCIETY SERIES
PublisherELECTROCHEMICAL SOCIETY INC
Volume99

Conference

ConferenceInternational Symposium on Interconnect and Contact Metallization for ULSI
CityHONOLULU
Period17/10/9922/10/99

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