High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

Chi Wen Chen*, Ting Chang Chang, Po-Tsun Liu, Hau Yan Lu, Kao Cheng Wang, Chen Shuo Huang, Chia Chun Ling, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations


A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/ drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm 2 /Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology,

Original languageEnglish
Pages (from-to)731-733
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Oct 2005


  • Hydrogenated amorphous silicon (a-Si:H)
  • Light-shield
  • Parasitic resistance
  • Thin-film transistor (TFT)


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