High-performance germanium p-and n-MOSFETs with NiGe Source/Drain

Che Wei Chen; Ju Yuan Tzeng; Cheng Ting Chung; Hung Pin Chien; Chao-Hsin Chien; Guang Li Luo

doi:10.1109/TED.2014.2327620

High-performance germanium p-and n-MOSFETs with NiGe Source/Drain

Che Wei Chen, Ju Yuan Tzeng, Cheng Ting Chung, Hung Pin Chien, Chao-Hsin Chien, Guang Li Luo

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this paper, we report Ge p-and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with NiGe source/drain (S/D) with high performance and low leakage current. The forward/reverse current ratio of the NiGe/n-Ge and NiGe/p-Ge junctions were ∼ 10⁵ and ∼2 × 10⁴ at |V| = 1V, respectively. Interface state densities D _it of Al₂O₃/GeO₂/Ge stack is improved to be around 10¹²/eV^-1 cm² near the midgap after forming gas annealing; the gate-stack also shows excellent reliability under constant field stressing. Both p-and n-channel MOSFETs show sufficiently high I_ON/I_OFF ratio. High driving current of ∼9 and ∼ 4~μ A\μm at (|V_GS}-V_T = 0.8) V and (|V_DS| = V is obtained, respectively, for p-and n-MOSFETs. Moreover, S/D series resistance (R_SD) of the p-and n-MOSFET is reduced by ∼25 % and ∼42% as compared with that of the transistors with conventional p/n junctions.

Original language	English
Article number	6844018
Pages (from-to)	2656-2661
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	8
DOIs	https://doi.org/10.1109/TED.2014.2327620
State	Published - Aug 2014

Keywords

Germanium
Schottky metal-oxide-semiconductor field-effect transistor (MOSFET).
metal source/drain (S/D)
nickel germanide

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10.1109/TED.2014.2327620

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title = "High-performance germanium p-and n-MOSFETs with NiGe Source/Drain",

abstract = "In this paper, we report Ge p-and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with NiGe source/drain (S/D) with high performance and low leakage current. The forward/reverse current ratio of the NiGe/n-Ge and NiGe/p-Ge junctions were ∼ 105 and ∼2 × 104 at |V| = 1V, respectively. Interface state densities D it of Al2O3/GeO2/Ge stack is improved to be around 1012/eV-1 cm2 near the midgap after forming gas annealing; the gate-stack also shows excellent reliability under constant field stressing. Both p-and n-channel MOSFETs show sufficiently high ION/IOFF ratio. High driving current of ∼9 and ∼ 4~μ A\μm at (|VGS}-VT = 0.8) V and (|VDS| = V is obtained, respectively, for p-and n-MOSFETs. Moreover, S/D series resistance (RSD) of the p-and n-MOSFET is reduced by ∼25 % and ∼42% as compared with that of the transistors with conventional p/n junctions.",

keywords = "Germanium, Schottky metal-oxide-semiconductor field-effect transistor (MOSFET)., metal source/drain (S/D), nickel germanide",

author = "Chen, {Che Wei} and Tzeng, {Ju Yuan} and Chung, {Cheng Ting} and Chien, {Hung Pin} and Chao-Hsin Chien and Luo, {Guang Li}",

year = "2014",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Chen, Che Wei

AU - Tzeng, Ju Yuan

AU - Chung, Cheng Ting

AU - Chien, Hung Pin

AU - Chien, Chao-Hsin

AU - Luo, Guang Li

PY - 2014/8

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N2 - In this paper, we report Ge p-and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with NiGe source/drain (S/D) with high performance and low leakage current. The forward/reverse current ratio of the NiGe/n-Ge and NiGe/p-Ge junctions were ∼ 105 and ∼2 × 104 at |V| = 1V, respectively. Interface state densities D it of Al2O3/GeO2/Ge stack is improved to be around 1012/eV-1 cm2 near the midgap after forming gas annealing; the gate-stack also shows excellent reliability under constant field stressing. Both p-and n-channel MOSFETs show sufficiently high ION/IOFF ratio. High driving current of ∼9 and ∼ 4~μ A\μm at (|VGS}-VT = 0.8) V and (|VDS| = V is obtained, respectively, for p-and n-MOSFETs. Moreover, S/D series resistance (RSD) of the p-and n-MOSFET is reduced by ∼25 % and ∼42% as compared with that of the transistors with conventional p/n junctions.

AB - In this paper, we report Ge p-and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with NiGe source/drain (S/D) with high performance and low leakage current. The forward/reverse current ratio of the NiGe/n-Ge and NiGe/p-Ge junctions were ∼ 105 and ∼2 × 104 at |V| = 1V, respectively. Interface state densities D it of Al2O3/GeO2/Ge stack is improved to be around 1012/eV-1 cm2 near the midgap after forming gas annealing; the gate-stack also shows excellent reliability under constant field stressing. Both p-and n-channel MOSFETs show sufficiently high ION/IOFF ratio. High driving current of ∼9 and ∼ 4~μ A\μm at (|VGS}-VT = 0.8) V and (|VDS| = V is obtained, respectively, for p-and n-MOSFETs. Moreover, S/D series resistance (RSD) of the p-and n-MOSFET is reduced by ∼25 % and ∼42% as compared with that of the transistors with conventional p/n junctions.

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KW - Schottky metal-oxide-semiconductor field-effect transistor (MOSFET).

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KW - nickel germanide

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ER -

High-performance germanium p-and n-MOSFETs with NiGe Source/Drain

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