High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng Yu Wu; Dun Bao Ruan; Kuei Shu Chang-Liao; Yao Jen Lee; Yu Chuan Chiu; Chih Wei Liu; Guan Ting Liu; Bo Lien Kuo; Kai Chun Yang; Cheng Han Li; Po Tsun Liu

doi:10.23919/SNW57900.2023.10183924

High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng Yu Wu, Dun Bao Ruan, Kuei Shu Chang-Liao^*, Yao Jen Lee, Yu Chuan Chiu, Chih Wei Liu, Guan Ting Liu, Bo Lien Kuo, Kai Chun Yang, Cheng Han Li, Po Tsun Liu

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.

Original language	English
Title of host publication	2023 Silicon Nanoelectronics Workshop, SNW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23-24
Number of pages	2
ISBN (Electronic)	9784863488083
DOIs	https://doi.org/10.23919/SNW57900.2023.10183924
State	Published - 2023
Event	26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan Duration: 11 Jun 2023 → 12 Jun 2023

Publication series

Name	2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2023
Country/Territory	Japan
City	Kyoto
Period	11/06/23 → 12/06/23

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10.23919/SNW57900.2023.10183924

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Wu, C. Y., Ruan, D. B., Chang-Liao, K. S., Lee, Y. J., Chiu, Y. C., Liu, C. W., Liu, G. T., Kuo, B. L., Yang, K. C., Li, C. H., & Liu, P. T. (2023). High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation. In 2023 Silicon Nanoelectronics Workshop, SNW 2023 (pp. 23-24). (2023 Silicon Nanoelectronics Workshop, SNW 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW57900.2023.10183924

Wu, Cheng Yu ; Ruan, Dun Bao ; Chang-Liao, Kuei Shu et al. / High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation. 2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 23-24 (2023 Silicon Nanoelectronics Workshop, SNW 2023).

@inproceedings{c59cdc85168b4107a8df307a5cb50ed6,

title = "High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation",

abstract = "A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.",

author = "Wu, {Cheng Yu} and Ruan, {Dun Bao} and Chang-Liao, {Kuei Shu} and Lee, {Yao Jen} and Chiu, {Yu Chuan} and Liu, {Chih Wei} and Liu, {Guan Ting} and Kuo, {Bo Lien} and Yang, {Kai Chun} and Li, {Cheng Han} and Liu, {Po Tsun}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",

year = "2023",

doi = "10.23919/SNW57900.2023.10183924",

language = "English",

series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "23--24",

booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

address = "美國",

}

Wu, CY, Ruan, DB, Chang-Liao, KS, Lee, YJ, Chiu, YC, Liu, CW, Liu, GT, Kuo, BL, Yang, KC, Li, CH & Liu, PT 2023, High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation. in 2023 Silicon Nanoelectronics Workshop, SNW 2023. 2023 Silicon Nanoelectronics Workshop, SNW 2023, Institute of Electrical and Electronics Engineers Inc., pp. 23-24, 26th Silicon Nanoelectronics Workshop, SNW 2023, Kyoto, Japan, 11/06/23. https://doi.org/10.23919/SNW57900.2023.10183924

High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation. / Wu, Cheng Yu; Ruan, Dun Bao; Chang-Liao, Kuei Shu et al.
2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 23-24 (2023 Silicon Nanoelectronics Workshop, SNW 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

AU - Wu, Cheng Yu

AU - Ruan, Dun Bao

AU - Chang-Liao, Kuei Shu

AU - Lee, Yao Jen

AU - Chiu, Yu Chuan

AU - Liu, Chih Wei

AU - Liu, Guan Ting

AU - Kuo, Bo Lien

AU - Yang, Kai Chun

AU - Li, Cheng Han

AU - Liu, Po Tsun

PY - 2023

Y1 - 2023

N2 - A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.

AB - A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.

UR - http://www.scopus.com/inward/record.url?scp=85167404602&partnerID=8YFLogxK

U2 - 10.23919/SNW57900.2023.10183924

DO - 10.23919/SNW57900.2023.10183924

M3 - Conference contribution

AN - SCOPUS:85167404602

T3 - 2023 Silicon Nanoelectronics Workshop, SNW 2023

SP - 23

EP - 24

BT - 2023 Silicon Nanoelectronics Workshop, SNW 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th Silicon Nanoelectronics Workshop, SNW 2023

Y2 - 11 June 2023 through 12 June 2023

ER -

Wu CY, Ruan DB, Chang-Liao KS, Lee YJ, Chiu YC, Liu CW et al. High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation. In 2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 23-24. (2023 Silicon Nanoelectronics Workshop, SNW 2023). doi: 10.23919/SNW57900.2023.10183924

High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

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