High Performance GaN HEMT and Ge Fin FET Device Realizing by Atomic-layer Defect-free Etching with Chlorine Neutral Beam

Daisuke Ohori*, Niraj Man Shrestha, Yiming Li, Jenn Hwan Tarng, Seiji Samukawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Engineering & Materials Science

Chemical Compounds