@inproceedings{a6f0df6aa504443c944aa928550f68a7,
title = "High performance GaN-based light-emitting diodes with geometric GaN shaping structure",
abstract = "InGaN-GaN light emitting diodes (LEDs) with p-roughened surface and n-bowl structure were fabricated by low temperature growing, ICP etching, wafer-bonding, and laser lift-off technologies. Ni/Ag/Ni mirror was introduced on the n-bowl surface. It was found the light intensity of PRUB-LEDs with different bowl size are all higher than PR-LED. The intensity of PRUB-LED with 3 um bowls was 2.33 times higher than that of the PR-LED.",
author = "Cheng Liao and Yew-Chuhg Wu",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2983178",
language = "English",
isbn = "9781566776530",
series = "ECS Transactions",
number = "7",
pages = "223--225",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9",
edition = "7",
note = "State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}