High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

Shih Han Chen; Hung Chuan Liu; Chun Yi Lee; Jon Yiew Gan; Hsiao-Wen Zan; Jenn Chang Hwang; Yi Yun Cheng; Ping Chiang Lyu

doi:10.1016/j.orgel.2015.05.046

High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

Shih Han Chen, Hung Chuan Liu, Chun Yi Lee, Jon Yiew Gan^*, Hsiao-Wen Zan, Jenn Chang Hwang, Yi Yun Cheng, Ping Chiang Lyu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Device performance of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) has been improved greatly by using bovine serum albumin (BSA) as the top gate dielectric. BSA is a natural protein with acidic and basic amino acid residues, which is easily hydrated in air ambient. A typical a-IGZO TFT with hydrated BSA as the top gate dielectric exhibits a field-effect mobility (μ_FE) value of 113.5 cm² V^-1 s^-1 in saturation regime and a threshold voltage (V_TH) value of 0.25 V in air ambient. The excellent device performance can be well explained by the formation of electric double layers (EDLs) near the interfaces of a-IGZO/hydrated BSA and hydrated BSA/gate electrode. The reliability issue of a-IGZO TFTs gated with hydrated BSA has been also investigated by using the life time test without encapsulation. The V_TH value increases and μ_FE,sat value reduces slightly for the a-IGZO TFT and remain stabilized over 60 days.

Original language	English
Pages (from-to)	200-204
Number of pages	5
Journal	Organic Electronics
Volume	24
DOIs	https://doi.org/10.1016/j.orgel.2015.05.046
State	Published - 10 Jun 2015

Keywords

BSA
EDL
Protein
TFT
a-IGZO

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10.1016/j.orgel.2015.05.046

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title = "High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein",

abstract = "Device performance of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) has been improved greatly by using bovine serum albumin (BSA) as the top gate dielectric. BSA is a natural protein with acidic and basic amino acid residues, which is easily hydrated in air ambient. A typical a-IGZO TFT with hydrated BSA as the top gate dielectric exhibits a field-effect mobility (μFE) value of 113.5 cm2 V-1 s-1 in saturation regime and a threshold voltage (VTH) value of 0.25 V in air ambient. The excellent device performance can be well explained by the formation of electric double layers (EDLs) near the interfaces of a-IGZO/hydrated BSA and hydrated BSA/gate electrode. The reliability issue of a-IGZO TFTs gated with hydrated BSA has been also investigated by using the life time test without encapsulation. The VTH value increases and μFE,sat value reduces slightly for the a-IGZO TFT and remain stabilized over 60 days.",

keywords = "BSA, EDL, Protein, TFT, a-IGZO",

author = "Chen, {Shih Han} and Liu, {Hung Chuan} and Lee, {Chun Yi} and Gan, {Jon Yiew} and Hsiao-Wen Zan and Hwang, {Jenn Chang} and Cheng, {Yi Yun} and Lyu, {Ping Chiang}",

year = "2015",

month = jun,

day = "10",

doi = "10.1016/j.orgel.2015.05.046",

language = "English",

volume = "24",

pages = "200--204",

journal = "Organic Electronics",

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AU - Chen, Shih Han

AU - Liu, Hung Chuan

AU - Lee, Chun Yi

AU - Gan, Jon Yiew

AU - Zan, Hsiao-Wen

AU - Hwang, Jenn Chang

AU - Cheng, Yi Yun

AU - Lyu, Ping Chiang

PY - 2015/6/10

Y1 - 2015/6/10

N2 - Device performance of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) has been improved greatly by using bovine serum albumin (BSA) as the top gate dielectric. BSA is a natural protein with acidic and basic amino acid residues, which is easily hydrated in air ambient. A typical a-IGZO TFT with hydrated BSA as the top gate dielectric exhibits a field-effect mobility (μFE) value of 113.5 cm2 V-1 s-1 in saturation regime and a threshold voltage (VTH) value of 0.25 V in air ambient. The excellent device performance can be well explained by the formation of electric double layers (EDLs) near the interfaces of a-IGZO/hydrated BSA and hydrated BSA/gate electrode. The reliability issue of a-IGZO TFTs gated with hydrated BSA has been also investigated by using the life time test without encapsulation. The VTH value increases and μFE,sat value reduces slightly for the a-IGZO TFT and remain stabilized over 60 days.

AB - Device performance of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) has been improved greatly by using bovine serum albumin (BSA) as the top gate dielectric. BSA is a natural protein with acidic and basic amino acid residues, which is easily hydrated in air ambient. A typical a-IGZO TFT with hydrated BSA as the top gate dielectric exhibits a field-effect mobility (μFE) value of 113.5 cm2 V-1 s-1 in saturation regime and a threshold voltage (VTH) value of 0.25 V in air ambient. The excellent device performance can be well explained by the formation of electric double layers (EDLs) near the interfaces of a-IGZO/hydrated BSA and hydrated BSA/gate electrode. The reliability issue of a-IGZO TFTs gated with hydrated BSA has been also investigated by using the life time test without encapsulation. The VTH value increases and μFE,sat value reduces slightly for the a-IGZO TFT and remain stabilized over 60 days.

KW - BSA

KW - EDL

KW - Protein

KW - TFT

KW - a-IGZO

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DO - 10.1016/j.orgel.2015.05.046

M3 - Article

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SN - 1566-1199

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SP - 200

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JO - Organic Electronics

JF - Organic Electronics

ER -

High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

Abstract

Keywords

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