@inproceedings{e3cd9c119bf54e02a967e95f71a036d5,
title = "High performance Cu-doped SiO2 ReRAM by a novel chemical soak method",
abstract = "In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO2 film and effectively improve the reliability of the conventional Cu-doped SiO2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/ -0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (∼106), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO 2 ReRAM device.",
author = "Chin, {Fun Tat} and Yang, {Wen Luh} and Tien-Sheng Chao and Chang, {Yuan Ming} and Lin, {Li Min} and Liu, {Sheng Hsien} and Lin, {Chia Hsiung}",
year = "2011",
doi = "10.1149/1.3633063",
language = "English",
isbn = "9781566779036",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "469--473",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",
note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",
}