High performance charge-trapping flash memory with highly-scaled trapping layer

Albert Chin; Chung-Yong Tsai; Hong Wang

doi:10.1109/NVMTS.2011.6137106

High performance charge-trapping flash memory with highly-scaled trapping layer

Albert Chin^*, Chung-Yong Tsai, Hong Wang

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si ₃N ₄-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 ⁶ cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.

Original language	English
Pages	32-35
Number of pages	4
DOIs	https://doi.org/10.1109/NVMTS.2011.6137106
State	Published - 2011
Event	2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China Duration: 7 Nov 2011 → 9 Nov 2011

Conference

Conference	2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011
Country/Territory	China
City	Shanghai
Period	7/11/11 → 9/11/11

Keywords

CT flash
Charge-trapping flash
ENT
high-
non-volatile memory

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10.1109/NVMTS.2011.6137106

Cite this

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title = "High performance charge-trapping flash memory with highly-scaled trapping layer",

abstract = "We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.",

keywords = "CT flash, Charge-trapping flash, ENT, high-, non-volatile memory",

author = "Albert Chin and Chung-Yong Tsai and Hong Wang",

year = "2011",

doi = "10.1109/NVMTS.2011.6137106",

language = "English",

pages = "32--35",

note = "2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 ; Conference date: 07-11-2011 Through 09-11-2011",

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AU - Chin, Albert

AU - Tsai, Chung-Yong

AU - Wang, Hong

PY - 2011

Y1 - 2011

N2 - We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.

AB - We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si 3N 4-thickness (ENT) trapping layer <4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 10 6 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.

KW - CT flash

KW - Charge-trapping flash

KW - ENT

KW - high-

KW - non-volatile memory

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DO - 10.1109/NVMTS.2011.6137106

M3 - Paper

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T2 - 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011

Y2 - 7 November 2011 through 9 November 2011

ER -

High performance charge-trapping flash memory with highly-scaled trapping layer

Abstract

Conference

Keywords

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