TY - GEN
T1 - High performance and reliability of poly-Si thin-film transistors using nickel drive-in induced laterally crystallization
AU - Wu, Yew-Chuhg
AU - Chang, Chih Pang
PY - 2010/12/1
Y1 - 2010/12/1
N2 - In this study, polycrystalline silicon thin film transistors using drive-in Ni induced lateral crystallization (DILC) was proposed. In DILC, F+ implantation was used to drive Ni in the α-Si layer. To reduce the Ni contamination, the remained Ni film was then removed, and subsequently annealed at 590°C It was found DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high on-state current, lower trap state density, smaller standard deviations, and low off-state leakage current compared with conventional Ni-metal-induced lateral crystallization (MILC) TFTs.
AB - In this study, polycrystalline silicon thin film transistors using drive-in Ni induced lateral crystallization (DILC) was proposed. In DILC, F+ implantation was used to drive Ni in the α-Si layer. To reduce the Ni contamination, the remained Ni film was then removed, and subsequently annealed at 590°C It was found DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high on-state current, lower trap state density, smaller standard deviations, and low off-state leakage current compared with conventional Ni-metal-induced lateral crystallization (MILC) TFTs.
UR - http://www.scopus.com/inward/record.url?scp=79952682999&partnerID=8YFLogxK
U2 - 10.1149/1.3481236
DO - 10.1149/1.3481236
M3 - Conference contribution
AN - SCOPUS:79952682999
SN - 9781566778244
T3 - ECS Transactions
SP - 193
EP - 195
BT - Thin Film Transistors 10, TFT 10
T2 - 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
Y2 - 11 October 2010 through 15 October 2010
ER -