Abstract
We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH3 plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (>109), a steep subthreshold slope (SS) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability.
Original language | English |
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Article number | 1419289 |
Pages (from-to) | 777-780 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
State | Published - 13 Dec 2004 |
Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 Dec 2004 → 15 Dec 2004 |