High-performance and damage-free magnetic film etching using pulse-time-modulated Cl2 plasma

Tomonori Mukai*, Hiromitsu Hada, Shuichi Tahara, Hiroaki Yoda, Seiji Samukawa

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

19 Scopus citations


We have developed a reactive ion etching (RIE) technique for magnetic films using pulse-time-modulated (TM) plasma. Using TM plasma etching can make the etching process high-performance and free of magnetic damage and corrosion. On the other hand, the conventional continuous wave discharge (CW) plasma etching process causes corrosion problems and degrades magnetic properties. We speculate that the negative ions injected from the TM plasma enhanced the chemical reaction on the magnetic film surface. We conclude that the TM plasma etching is a high-performance magnetic film etching process for fabricating magnetoresistive random access memory (MRAM).

Original languageEnglish
Pages (from-to)5542-5544
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
StatePublished - 20 Jun 2006


  • Magnetic film
  • MRAM
  • Negative ion
  • Pulse-time-modulated plasma
  • Reactive ion etching


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