High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation

Po-Tsun Liu; Po Yi Kuo; Shan Ming Hsu

doi:10.1149/08611.0091ecst

High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation

Po-Tsun Liu, Po Yi Kuo, Shan Ming Hsu

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WCb)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-K HfC2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage ~-0.072 V, high field-effect mobility (p.re) ~ 23.8 cnvW-s, excellent subthreshold swing ~ 72.6 mV/dec, low voltage operation (low power consumption), high electrical reliability, and small hysteresis.

Original language	English
Title of host publication	ECS Transactions
Editors	Yue Kuo
Publisher	Electrochemical Society Inc.
Pages	91-93
Number of pages	3
Volume	86
Edition	11
ISBN (Electronic)	9781510871717, 9781607688570
DOIs	https://doi.org/10.1149/08611.0091ecst
State	Published - 2018
Event	Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 30 Sep 2018 → 4 Oct 2018

Publication series

Name	ECS Transactions
Number	11
Volume	86
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	30/09/18 → 4/10/18

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10.1149/08611.0091ecst

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title = "High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation",

abstract = "Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WCb)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-K HfC2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage ~-0.072 V, high field-effect mobility (p.re) ~ 23.8 cnvW-s, excellent subthreshold swing ~ 72.6 mV/dec, low voltage operation (low power consumption), high electrical reliability, and small hysteresis.",

author = "Po-Tsun Liu and Kuo, {Po Yi} and Hsu, {Shan Ming}",

note = "Publisher Copyright: {\textcopyright} 2018 Electrochemical Society Inc.All rights reserved.; Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",

year = "2018",

doi = "10.1149/08611.0091ecst",

language = "English",

volume = "86",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "11",

pages = "91--93",

editor = "Yue Kuo",

booktitle = "ECS Transactions",

edition = "11",

}

Liu, P-T, Kuo, PY & Hsu, SM 2018, High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation. in Y Kuo (ed.), ECS Transactions. 11 edn, vol. 86, ECS Transactions, no. 11, vol. 86, Electrochemical Society Inc., pp. 91-93, Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 30/09/18. https://doi.org/10.1149/08611.0091ecst

High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation. / Liu, Po-Tsun; Kuo, Po Yi; Hsu, Shan Ming.
ECS Transactions. ed. / Yue Kuo. Vol. 86 11. ed. Electrochemical Society Inc., 2018. p. 91-93 (ECS Transactions; Vol. 86, No. 11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation

AU - Liu, Po-Tsun

AU - Kuo, Po Yi

AU - Hsu, Shan Ming

PY - 2018

Y1 - 2018

N2 - Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WCb)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-K HfC2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage ~-0.072 V, high field-effect mobility (p.re) ~ 23.8 cnvW-s, excellent subthreshold swing ~ 72.6 mV/dec, low voltage operation (low power consumption), high electrical reliability, and small hysteresis.

AB - Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WCb)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-K HfC2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage ~-0.072 V, high field-effect mobility (p.re) ~ 23.8 cnvW-s, excellent subthreshold swing ~ 72.6 mV/dec, low voltage operation (low power consumption), high electrical reliability, and small hysteresis.

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M3 - Conference contribution

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T3 - ECS Transactions

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EP - 93

BT - ECS Transactions

A2 - Kuo, Yue

PB - Electrochemical Society Inc.

T2 - Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting

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High performance amorphous in-W-Zn-O thin film transistor with ultra-thin active channel for low voltage operation

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