High performance A-Igzo TFT with nano-dots doping

Hsiao-Wen Zan*, Wu Wei Tsai, Chia Hsin Chen, Chuang Chuang Tsai, Hsin-Fei Meng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A high mobility (̃79 cm 2Vs) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed to increase the field-effect mobility 17 times larger than that of the control sample. The influence of dots concentration and the doping concentration on device characteristics were investigated. In addition, we also studied the bottom gate device with NDD. We successfully demonstrate an effective and simple concept to improve device characteristics.

Original languageEnglish
Pages (from-to)28-31
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Issue number1
StatePublished - 1 Jun 2011
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 15 May 201120 May 2011


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