High-performance 30-period quantum-dot infrared photodetector

Shu Ting Chou*, Shih Yen Lin, Ru Shang Hsiao, Jim Yong Chi, Jyh Shyang Wang, Meng Chyi Wu, Jenn-Fang Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAsGaAs quantum-dot structures are investigated. High responsivity of 2.37 AW and detectivity of 2.48× 1010 cm Hz12 W for 30-period QDIPs under 10 K are observed at -2.7 and 1.2 V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure.

Original languageEnglish
Pages (from-to)1129-1131
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - 1 Dec 2005


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