High-performance 30-period quantum-dot infrared photodetector

Shu Ting Chou; Shih Yen Lin; Ru Shang Hsiao; Jim Yong Chi; Jyh Shyang Wang; Meng Chyi Wu; Jenn-Fang Chen

doi:10.1116/1.1900730

High-performance 30-period quantum-dot infrared photodetector

Shu Ting Chou^*, Shih Yen Lin, Ru Shang Hsiao, Jim Yong Chi, Jyh Shyang Wang, Meng Chyi Wu, Jenn-Fang Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAsGaAs quantum-dot structures are investigated. High responsivity of 2.37 AW and detectivity of 2.48× 1010 cm Hz12 W for 30-period QDIPs under 10 K are observed at -2.7 and 1.2 V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure.

Original language	English
Pages (from-to)	1129-1131
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1900730
State	Published - 1 Dec 2005

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title = "High-performance 30-period quantum-dot infrared photodetector",

abstract = "In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAsGaAs quantum-dot structures are investigated. High responsivity of 2.37 AW and detectivity of 2.48× 1010 cm Hz12 W for 30-period QDIPs under 10 K are observed at -2.7 and 1.2 V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure.",

author = "Chou, {Shu Ting} and Lin, {Shih Yen} and Hsiao, {Ru Shang} and Chi, {Jim Yong} and Wang, {Jyh Shyang} and Wu, {Meng Chyi} and Jenn-Fang Chen",

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AU - Chou, Shu Ting

AU - Lin, Shih Yen

AU - Hsiao, Ru Shang

AU - Chi, Jim Yong

AU - Wang, Jyh Shyang

AU - Wu, Meng Chyi

AU - Chen, Jenn-Fang

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Y1 - 2005/12/1

N2 - In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAsGaAs quantum-dot structures are investigated. High responsivity of 2.37 AW and detectivity of 2.48× 1010 cm Hz12 W for 30-period QDIPs under 10 K are observed at -2.7 and 1.2 V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure.

AB - In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAsGaAs quantum-dot structures are investigated. High responsivity of 2.37 AW and detectivity of 2.48× 1010 cm Hz12 W for 30-period QDIPs under 10 K are observed at -2.7 and 1.2 V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure.

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High-performance 30-period quantum-dot infrared photodetector

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