This paper presents a 1.0Mb high-performance 0.6V V MIN 6T SRAM design implemented in UMC 55nm Standard Performance (SP) CMOS technology. This design utilizes an adaptive LBL bleeder technique to reduce Read disturb and Half-Select disturb of 6T cells while maintaining adequate sensing margin. A bleeder timing control circuit adaptively adjusts the LBL voltage level prior to Read/Write operation to facilitate wide operation voltage range. Hierarchical WL, hierarchical BL, and distributed replica timing control scheme are used to improve SRAM performance. Based on measurement results, the SRAM operates from 1.5V down to 0.6V. The maximum operating frequency is 1.517GHz@1.5V and 469MHz@0.7V.
|Number of pages||4|
|State||Published - 28 Sep 2012|
|Event||2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of|
Duration: 20 May 2012 → 23 May 2012
|Conference||2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012|
|Country/Territory||Korea, Republic of|
|Period||20/05/12 → 23/05/12|