High performance 0.1 μm PD SOI tunneling-biased MOSFETs (TBMOS)

Kuo Nan Yang; Yi Lin Chan; Yu Lin Chu; Hou Yu Chen; Fu Liang Yang; Chen-Ming Hu

doi:10.1109/IEDM.2001.979668

High performance 0.1 μm PD SOI tunneling-biased MOSFETs (TBMOS)

Kuo Nan Yang^*, Yi Lin Chan, Yu Lin Chu, Hou Yu Chen, Fu Liang Yang, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper for the first time proposes a new structure of partially-depleted SOI MOSFETs- Tunneling-Biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (∼66 mV/dec), and > 15 % increase in I_D,SAT. TBMOS also has better hot carrier immunity than body grounded device.

Original language	English
Pages (from-to)	934-936
Number of pages	3
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979668
State	Published - 2001
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001

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title = "High performance 0.1 μm PD SOI tunneling-biased MOSFETs (TBMOS)",

abstract = "This paper for the first time proposes a new structure of partially-depleted SOI MOSFETs- Tunneling-Biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (∼66 mV/dec), and > 15 % increase in ID,SAT. TBMOS also has better hot carrier immunity than body grounded device.",

author = "Yang, {Kuo Nan} and Chan, {Yi Lin} and Chu, {Yu Lin} and Chen, {Hou Yu} and Yang, {Fu Liang} and Chen-Ming Hu",

year = "2001",

doi = "10.1109/IEDM.2001.979668",

language = "English",

pages = "934--936",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - High performance 0.1 μm PD SOI tunneling-biased MOSFETs (TBMOS)

AU - Yang, Kuo Nan

AU - Chan, Yi Lin

AU - Chu, Yu Lin

AU - Chen, Hou Yu

AU - Yang, Fu Liang

AU - Hu, Chen-Ming

PY - 2001

Y1 - 2001

N2 - This paper for the first time proposes a new structure of partially-depleted SOI MOSFETs- Tunneling-Biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (∼66 mV/dec), and > 15 % increase in ID,SAT. TBMOS also has better hot carrier immunity than body grounded device.

AB - This paper for the first time proposes a new structure of partially-depleted SOI MOSFETs- Tunneling-Biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (∼66 mV/dec), and > 15 % increase in ID,SAT. TBMOS also has better hot carrier immunity than body grounded device.

UR - http://www.scopus.com/inward/record.url?scp=0035714398&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979668

DO - 10.1109/IEDM.2001.979668

M3 - Conference article

AN - SCOPUS:0035714398

SN - 0163-1918

SP - 934

EP - 936

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

High performance 0.1 μm PD SOI tunneling-biased MOSFETs (TBMOS)

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