High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

Sun Jay Chang; Chun Yen Chang; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1109/55.823577

High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

Sun Jay Chang, Chun Yen Chang, Tien-Sheng Chao, Tiao Yuan Huang

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V_th simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

Original language	English
Pages (from-to)	127-129
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	3
DOIs	https://doi.org/10.1109/55.823577
State	Published - 1 Mar 2000

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abstract = "In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low Vth simultaneously, which results in an excellent performance for the indium-implanted DTMOS.",

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AU - Chao, Tien-Sheng

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N2 - In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low Vth simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

AB - In this letter, we demonstrate a high-performance 0.1 μm Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low Vth simultaneously, which results in an excellent performance for the indium-implanted DTMOS.

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High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

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