High-peak-power diode-pumped actively Q-switched Nd:YAG intracavity Raman laser with an undoped YVO4 crystal

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Abstract

The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 μJ at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.

Original languageEnglish
Title of host publicationSolid State Lasers XVII
Subtitle of host publicationTechnology and Devices
DOIs
StatePublished - 7 May 2008
EventSolid State Lasers XVII: Technology and Devices - San Jose, CA, United States
Duration: 20 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6871
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lasers XVII: Technology and Devices
Country/TerritoryUnited States
CitySan Jose, CA
Period20/01/0824/01/08

Keywords

  • Actively Q-switched
  • Diode-pumped laser
  • Raman laser

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