High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

Ang Sheng Chou; Pin Chun Shen; Chao Ching Cheng; Li Syuan Lu; Wei Chen Chueh; Ming Yang Li; Gregory Pitner; Wen Hao Chang; Chih I. Wu; Jing Kong; Lain Jong Li; H. S.Philip Wong

doi:10.1109/VLSITechnology18217.2020.9265040

High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

Ang Sheng Chou, Pin Chun Shen, Chao Ching Cheng, Li Syuan Lu, Wei Chen Chueh, Ming Yang Li, Gregory Pitner, Wen Hao Chang, Chih I. Wu, Jing Kong, Lain Jong Li, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

Original language	English
Title of host publication	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728164601
DOIs	https://doi.org/10.1109/VLSITechnology18217.2020.9265040
State	Published - Jun 2020
Event	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States Duration: 16 Jun 2020 → 19 Jun 2020

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2020-June
ISSN (Print)	0743-1562

Conference

Conference	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
Country/Territory	United States
City	Honolulu
Period	16/06/20 → 19/06/20

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10.1109/VLSITechnology18217.2020.9265040

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Chou, A. S., Shen, P. C., Cheng, C. C., Lu, L. S., Chueh, W. C., Li, M. Y., Pitner, G., Chang, W. H., Wu, C. I., Kong, J., Li, L. J., & Wong, H. S. P. (2020). High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. In 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings Article 9265040 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnology18217.2020.9265040

Chou, Ang Sheng ; Shen, Pin Chun ; Cheng, Chao Ching et al. / High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping",

abstract = "We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um. ",

author = "Chou, {Ang Sheng} and Shen, {Pin Chun} and Cheng, {Chao Ching} and Lu, {Li Syuan} and Chueh, {Wei Chen} and Li, {Ming Yang} and Gregory Pitner and Chang, {Wen Hao} and Wu, {Chih I.} and Jing Kong and Li, {Lain Jong} and Wong, {H. S.Philip}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 ; Conference date: 16-06-2020 Through 19-06-2020",

year = "2020",

month = jun,

doi = "10.1109/VLSITechnology18217.2020.9265040",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings",

address = "美國",

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Chou, AS, Shen, PC, Cheng, CC, Lu, LS, Chueh, WC, Li, MY, Pitner, G, Chang, WH, Wu, CI, Kong, J, Li, LJ & Wong, HSP 2020, High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. in 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings., 9265040, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Honolulu, United States, 16/06/20. https://doi.org/10.1109/VLSITechnology18217.2020.9265040

High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. / Chou, Ang Sheng; Shen, Pin Chun; Cheng, Chao Ching et al.
2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9265040 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chou, Ang Sheng

AU - Shen, Pin Chun

AU - Cheng, Chao Ching

AU - Lu, Li Syuan

AU - Chueh, Wei Chen

AU - Li, Ming Yang

AU - Pitner, Gregory

AU - Chang, Wen Hao

AU - Wu, Chih I.

AU - Kong, Jing

AU - Li, Lain Jong

AU - Wong, H. S.Philip

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N2 - We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

AB - We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

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DO - 10.1109/VLSITechnology18217.2020.9265040

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BT - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020

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ER -

Chou AS, Shen PC, Cheng CC, Lu LS, Chueh WC, Li MY et al. High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. In 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9265040. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnology18217.2020.9265040

High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

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