@inproceedings{bdd3f711caf545e1abcbb729175ed32a,
title = "High mobility tungsten-doped thin-film transistor on polyimide substrate with low temperature process",
abstract = "A novel high mobility channel material, amorphous tungsten doped indium-oxide, is used as the active layer of flexible TFT, which is fabricated on a transparent polyimide under a low temperature process. The effects of channel thickness are investigated as well in this work. The flexible TFT with a suitable thickness of IWO film shows a high carrier mobility and low sub-threshold swing. The improvement can be attributed to increased donor-like oxygen vacancy with the thickness of channel layer increased.",
keywords = "IWO, Polyimide, TFT",
author = "Ruan, {Dun Bao} and Po-Tsun Liu and Chiu, {Yu Chuan} and Yu, {Min Chin} and Gan, {Kai Jhih} and Chien, {Ta Chun} and Kuo, {Po Yi} and Sze, {Simon M.}",
year = "2018",
month = may,
doi = "10.1109/ISNE.2018.8394633",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",
note = "7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
}