High mobility SnO2 TFT for display and future IC

Albert Chin; Cheng Wei Shih; Chun Fu Lu; Wei Fang Su

doi:10.1109/AM-FPD.2016.7543695

High mobility SnO₂ TFT for display and future IC

Albert Chin, Cheng Wei Shih, Chun Fu Lu, Wei Fang Su

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Very high mobility of 149∼189 cm²/Vs, large on-to-off current ratio (I_ON/I_Off) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO₂ TFT device at an ultra-thin SnO₂ thickness of 4.5 nm. The device mobility of SnO₂ TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS₂ MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO₂/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO₂ transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	294-297
Number of pages	4
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543695
State	Published - 15 Aug 2016
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 6 Jul 2016 → 8 Jul 2016

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	6/07/16 → 8/07/16

Access to Document

10.1109/AM-FPD.2016.7543695

Cite this

Chin, A., Shih, C. W., Lu, C. F., & Su, W. F. (2016). High mobility SnO₂ TFT for display and future IC. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 294-297). Article 7543695 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543695

Chin, Albert ; Shih, Cheng Wei ; Lu, Chun Fu et al. / High mobility SnO₂ TFT for display and future IC. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 294-297 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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title = "High mobility SnO2 TFT for display and future IC",

abstract = "Very high mobility of 149∼189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.",

author = "Albert Chin and Shih, {Cheng Wei} and Lu, {Chun Fu} and Su, {Wei Fang}",

note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",

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doi = "10.1109/AM-FPD.2016.7543695",

language = "English",

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Chin, A, Shih, CW, Lu, CF & Su, WF 2016, High mobility SnO₂ TFT for display and future IC. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543695, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 294-297, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 6/07/16. https://doi.org/10.1109/AM-FPD.2016.7543695

High mobility SnO₂ TFT for display and future IC. / Chin, Albert; Shih, Cheng Wei; Lu, Chun Fu et al.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 294-297 7543695 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Shih, Cheng Wei

AU - Lu, Chun Fu

AU - Su, Wei Fang

PY - 2016/8/15

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N2 - Very high mobility of 149∼189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.

AB - Very high mobility of 149∼189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC.

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Chin A, Shih CW, Lu CF, Su WF. High mobility SnO₂ TFT for display and future IC. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 294-297. 7543695. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543695