High Mobility Oxide Complementary TFTs for System-on-Display and Three-Dimensional Brain-Mimicking IC

Albert Chin; Te Jui Yen; You Da Chen; Cheng Wei Shih; Vladimir Gritsenko

doi:10.1002/sdtp.14466

High Mobility Oxide Complementary TFTs for System-on-Display and Three-Dimensional Brain-Mimicking IC

Albert Chin, Te Jui Yen, You Da Chen, Cheng Wei Shih, Vladimir Gritsenko

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm²/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO₂ are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.

Original language	English
Pages (from-to)	292-294
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	52
Issue number	S1
DOIs	https://doi.org/10.1002/sdtp.14466
State	Published - Feb 2021
Event	International Conference on Display Technology, ICDT 2020 - Wuhan, China Duration: 18 Oct 2020 → 21 Oct 2020

Keywords

Brain-mimicking integrated circuit
Complementary TFTs
High mobility
N-type TFT
P-type TFT
SnO pTFT
System-on-panel
ZnO nTFT

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10.1002/sdtp.14466

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title = "High Mobility Oxide Complementary TFTs for System-on-Display and Three-Dimensional Brain-Mimicking IC",

abstract = "One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.",

keywords = "Brain-mimicking integrated circuit, Complementary TFTs, High mobility, N-type TFT, P-type TFT, SnO pTFT, System-on-panel, ZnO nTFT",

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AU - Yen, Te Jui

AU - Chen, You Da

AU - Shih, Cheng Wei

AU - Gritsenko, Vladimir

PY - 2021/2

Y1 - 2021/2

N2 - One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.

AB - One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.

KW - Brain-mimicking integrated circuit

KW - Complementary TFTs

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KW - N-type TFT

KW - P-type TFT

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High Mobility Oxide Complementary TFTs for System-on-Display and Three-Dimensional Brain-Mimicking IC

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Keywords

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