High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC

Albert Chin; Te Jui Yen; Cheng Wei Shih; You Da Chen

doi:10.36463/idw.2019.0455

High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC

Albert Chin, Te Jui Yen, Cheng Wei Shih, You Da Chen

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Owing to fast technology evolution, the n-type SnO2 thin-film transistor (TFT) can reach high mobility of 238 cm²/Vs and p-type SnO TFT has high hole mobility of 7.6 cm²/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.

Original language	English
Title of host publication	26th International Display Workshops, IDW 2019
Publisher	International Display Workshops
Pages	455-457
Number of pages	3
ISBN (Electronic)	9781713806301
DOIs	https://doi.org/10.36463/idw.2019.0455
State	Published - Nov 2019
Event	26th International Display Workshops, IDW 2019 - Sapporo Convention Center, Sapporo, Japan Duration: 27 Nov 2019 → 29 Nov 2019

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	26th International Display Workshops, IDW 2019
Country/Territory	Japan
City	Sapporo
Period	27/11/19 → 29/11/19

Keywords

3D brain-mimicking IC architecture
Metal-oxide transistor
Monolithic 3D integration

Access to Document

10.36463/idw.2019.0455

Cite this

@inproceedings{9ff01d9affa6444d8e120a434907ff61,

title = "High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC",

abstract = "Owing to fast technology evolution, the n-type SnO2 thin-film transistor (TFT) can reach high mobility of 238 cm2/Vs and p-type SnO TFT has high hole mobility of 7.6 cm2/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.",

keywords = "3D brain-mimicking IC architecture, Metal-oxide transistor, Monolithic 3D integration",

author = "Albert Chin and Yen, {Te Jui} and Shih, {Cheng Wei} and Chen, {You Da}",

note = "Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",

year = "2019",

month = nov,

doi = "10.36463/idw.2019.0455",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "455--457",

booktitle = "26th International Display Workshops, IDW 2019",

}

Chin, A, Yen, TJ, Shih, CW & Chen, YD 2019, High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC. in 26th International Display Workshops, IDW 2019. Proceedings of the International Display Workshops, vol. 2, International Display Workshops, pp. 455-457, 26th International Display Workshops, IDW 2019, Sapporo, Japan, 27/11/19. https://doi.org/10.36463/idw.2019.0455

High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC. / Chin, Albert; Yen, Te Jui; Shih, Cheng Wei et al.
26th International Display Workshops, IDW 2019. International Display Workshops, 2019. p. 455-457 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC

AU - Chin, Albert

AU - Yen, Te Jui

AU - Shih, Cheng Wei

AU - Chen, You Da

PY - 2019/11

Y1 - 2019/11

N2 - Owing to fast technology evolution, the n-type SnO2 thin-film transistor (TFT) can reach high mobility of 238 cm2/Vs and p-type SnO TFT has high hole mobility of 7.6 cm2/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.

AB - Owing to fast technology evolution, the n-type SnO2 thin-film transistor (TFT) can reach high mobility of 238 cm2/Vs and p-type SnO TFT has high hole mobility of 7.6 cm2/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.

KW - 3D brain-mimicking IC architecture

KW - Metal-oxide transistor

KW - Monolithic 3D integration

UR - http://www.scopus.com/inward/record.url?scp=85094628935&partnerID=8YFLogxK

U2 - 10.36463/idw.2019.0455

DO - 10.36463/idw.2019.0455

M3 - Conference contribution

AN - SCOPUS:85094628935

T3 - Proceedings of the International Display Workshops

SP - 455

EP - 457

BT - 26th International Display Workshops, IDW 2019

PB - International Display Workshops

T2 - 26th International Display Workshops, IDW 2019

Y2 - 27 November 2019 through 29 November 2019

ER -

High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this