High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Yen Chun Fu; William Hsu; Yen Ting Chen; Huang Siang Lan; Cheng Han Lee; Hung Chih Chang; Hou Yun Lee; Guang Li Luo; Chao-Hsin Chien; C. W. Liu; Chen-Ming Hu; Fu Liang Yang

doi:10.1109/IEDM.2010.5703388

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Yen Chun Fu^*, William Hsu, Yen Ting Chen, Huang Siang Lan, Cheng Han Lee, Hung Chih Chang, Hou Yun Lee, Guang Li Luo, Chao-Hsin Chien, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

The record high peak mobility of ∼1050 cm²/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO₂ interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×10⁴. The low defective n⁺/p junction produced a record high on/off ratio of 2×10⁵, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	18.5.1-18.5.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703388
State	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

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10.1109/IEDM.2010.5703388

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Fu, Y. C., Hsu, W., Chen, Y. T., Lan, H. S., Lee, C. H., Chang, H. C., Lee, H. Y., Luo, G. L., Chien, C.-H., Liu, C. W., Hu, C.-M., & Yang, F. L. (2010). High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 18.5.1-18.5.4). Article 5703388 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703388

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title = "High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response",

abstract = "The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.",

author = "Fu, {Yen Chun} and William Hsu and Chen, {Yen Ting} and Lan, {Huang Siang} and Lee, {Cheng Han} and Chang, {Hung Chih} and Lee, {Hou Yun} and Luo, {Guang Li} and Chao-Hsin Chien and Liu, {C. W.} and Chen-Ming Hu and Yang, {Fu Liang}",

year = "2010",

doi = "10.1109/IEDM.2010.5703388",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "18.5.1--18.5.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Fu, YC, Hsu, W, Chen, YT, Lan, HS, Lee, CH, Chang, HC, Lee, HY, Luo, GL, Chien, C-H, Liu, CW, Hu, C-M & Yang, FL 2010, High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703388, Technical Digest - International Electron Devices Meeting, IEDM, pp. 18.5.1-18.5.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703388

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response. / Fu, Yen Chun; Hsu, William; Chen, Yen Ting et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 18.5.1-18.5.4 5703388 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

AU - Fu, Yen Chun

AU - Hsu, William

AU - Chen, Yen Ting

AU - Lan, Huang Siang

AU - Lee, Cheng Han

AU - Chang, Hung Chih

AU - Lee, Hou Yun

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Liu, C. W.

AU - Hu, Chen-Ming

AU - Yang, Fu Liang

PY - 2010

Y1 - 2010

N2 - The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

AB - The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

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U2 - 10.1109/IEDM.2010.5703388

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SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 18.5.1-18.5.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

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