High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors

Hsieh Cheng Han, Cheong Wei Chong, Sheng Bo Wang, Dawei Heh, Chi Ang Tseng, Yi Fan Huang, Surojit Chattopadhyay*, Kuei Hsien Chen, Chi Feng Lin, Jiun Haw Lee, Li Chyong Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

Original languageEnglish
Pages (from-to)1422-1428
Number of pages7
JournalNano letters
Volume13
Issue number4
DOIs
StatePublished - 10 Apr 2013

Keywords

  • Zinc oxide
  • equivalent planar capacitance
  • nanophase
  • silicon nanotip array
  • supercapacitors

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