High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors

Hsieh Cheng Han; Cheong Wei Chong; Sheng Bo Wang; Dawei Heh; Chi Ang Tseng; Yi Fan Huang; Surojit Chattopadhyay; Kuei Hsien Chen; Chi Feng Lin; Jiun Haw Lee; Li Chyong Chen

doi:10.1021/nl304303p

High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors

Hsieh Cheng Han, Cheong Wei Chong, Sheng Bo Wang, Dawei Heh, Chi Ang Tseng, Yi Fan Huang, Surojit Chattopadhyay^*, Kuei Hsien Chen, Chi Feng Lin, Jiun Haw Lee, Li Chyong Chen

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm ^-2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al ₂O₃) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 10¹⁰ cm^-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

Original language	English
Pages (from-to)	1422-1428
Number of pages	7
Journal	Nano letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1021/nl304303p
State	Published - 10 Apr 2013

Keywords

Zinc oxide
equivalent planar capacitance
nanophase
silicon nanotip array
supercapacitors

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10.1021/nl304303p

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@article{bd1248532f1745369ef653cd45f5d38c,

title = "High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors",

abstract = "A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.",

keywords = "Zinc oxide, equivalent planar capacitance, nanophase, silicon nanotip array, supercapacitors",

author = "Han, {Hsieh Cheng} and Chong, {Cheong Wei} and Wang, {Sheng Bo} and Dawei Heh and Tseng, {Chi Ang} and Huang, {Yi Fan} and Surojit Chattopadhyay and Chen, {Kuei Hsien} and Lin, {Chi Feng} and Lee, {Jiun Haw} and Chen, {Li Chyong}",

year = "2013",

month = apr,

day = "10",

doi = "10.1021/nl304303p",

language = "English",

volume = "13",

pages = "1422--1428",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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TY - JOUR

T1 - High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors

AU - Han, Hsieh Cheng

AU - Chong, Cheong Wei

AU - Wang, Sheng Bo

AU - Heh, Dawei

AU - Tseng, Chi Ang

AU - Huang, Yi Fan

AU - Chattopadhyay, Surojit

AU - Chen, Kuei Hsien

AU - Lin, Chi Feng

AU - Lee, Jiun Haw

AU - Chen, Li Chyong

PY - 2013/4/10

Y1 - 2013/4/10

N2 - A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

AB - A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

KW - Zinc oxide

KW - equivalent planar capacitance

KW - nanophase

KW - silicon nanotip array

KW - supercapacitors

UR - http://www.scopus.com/inward/record.url?scp=84876054060&partnerID=8YFLogxK

U2 - 10.1021/nl304303p

DO - 10.1021/nl304303p

M3 - Article

C2 - 23432577

AN - SCOPUS:84876054060

SN - 1530-6984

VL - 13

SP - 1422

EP - 1428

JO - Nano letters

JF - Nano letters

IS - 4

ER -

High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors

Abstract

Keywords

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