High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao

doi:10.1063/1.1352044

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan^*, Tan Fu Lei, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

High-k cobalt-titanium oxide (CoTiO₃) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO₃/Si₃N₄/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO₃ gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

Original language	English
Pages (from-to)	1439-1441
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	10
DOIs	https://doi.org/10.1063/1.1352044
State	Published - 5 Mar 2001

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title = "High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films",

abstract = "High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Tien-Sheng Chao",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

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Y1 - 2001/3/5

N2 - High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

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U2 - 10.1063/1.1352044

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

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