High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5Through Aluminum Capping

Meng Chien Lee; Wei Li Lee; Hung Ru Lin; Guang Li Luo; Chao Hsin Chien

doi:10.1109/LED.2021.3123607

High-Interface-Quality Hf-Based Gate Stacks on Si_0.5Ge_0.5Through Aluminum Capping

Meng Chien Lee, Wei Li Lee, Hung Ru Lin, Guang Li Luo, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We fabricated HfO2-based gate stacks on epi-Si_0.5Ge_0.5 substrates and investigated the effect of Al capping on TiN. The results revealed that the Al layer formed Al2O3, which functioned as a barrier against external oxygen diffusion, resulting in excellent interface quality. Furthermore, the density of oxide traps and flat-band voltage could be tuned using various ratios of Al to TiN at the top gate. Thus, an excellent interface state density and equivalent oxide thickness (EOT) of approximately 8 $\times \,\,10^{{10}}$ eV-1cm-2 and 1.3 nm were achieved for the gate stack on SiGe through Al capping on TiN.

Original language	English
Pages (from-to)	1723-1726
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	42
Issue number	12
DOIs	https://doi.org/10.1109/LED.2021.3123607
State	Published - 1 Dec 2021

Keywords

Al capping
interface passivation
SiGe channel

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title = "High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5Through Aluminum Capping",

abstract = "We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of Al capping on TiN. The results revealed that the Al layer formed Al2O3, which functioned as a barrier against external oxygen diffusion, resulting in excellent interface quality. Furthermore, the density of oxide traps and flat-band voltage could be tuned using various ratios of Al to TiN at the top gate. Thus, an excellent interface state density and equivalent oxide thickness (EOT) of approximately 8 $\times \,\,10^{{10}}$ eV-1cm-2 and 1.3 nm were achieved for the gate stack on SiGe through Al capping on TiN.",

keywords = "Al capping, interface passivation, SiGe channel",

author = "Lee, {Meng Chien} and Lee, {Wei Li} and Lin, {Hung Ru} and Luo, {Guang Li} and Chien, {Chao Hsin}",

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doi = "10.1109/LED.2021.3123607",

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T1 - High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5Through Aluminum Capping

AU - Lee, Meng Chien

AU - Lee, Wei Li

AU - Lin, Hung Ru

AU - Luo, Guang Li

AU - Chien, Chao Hsin

PY - 2021/12/1

Y1 - 2021/12/1

N2 - We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of Al capping on TiN. The results revealed that the Al layer formed Al2O3, which functioned as a barrier against external oxygen diffusion, resulting in excellent interface quality. Furthermore, the density of oxide traps and flat-band voltage could be tuned using various ratios of Al to TiN at the top gate. Thus, an excellent interface state density and equivalent oxide thickness (EOT) of approximately 8 $\times \,\,10^{{10}}$ eV-1cm-2 and 1.3 nm were achieved for the gate stack on SiGe through Al capping on TiN.

AB - We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of Al capping on TiN. The results revealed that the Al layer formed Al2O3, which functioned as a barrier against external oxygen diffusion, resulting in excellent interface quality. Furthermore, the density of oxide traps and flat-band voltage could be tuned using various ratios of Al to TiN at the top gate. Thus, an excellent interface state density and equivalent oxide thickness (EOT) of approximately 8 $\times \,\,10^{{10}}$ eV-1cm-2 and 1.3 nm were achieved for the gate stack on SiGe through Al capping on TiN.

KW - Al capping

KW - interface passivation

KW - SiGe channel

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High-Interface-Quality Hf-Based Gate Stacks on Si_0.5Ge_0.5Through Aluminum Capping

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