High hole mobility of Al2O3 MOSFETSs on dislocation free Ge-on-Insulator wafers

Albert Chin; D. S. Yu; C. H. Wu; C. H. Huang; W. J. Chen

High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers

Albert Chin^*, D. S. Yu, C. H. Wu, C. H. Huang, W. J. Chen

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

The much degraded mobility, high-κ dielectric crystallization, and EOT reduction after processing are the primary limitations of high-κ gate dielectric MOSFETs. We have fabricated the high-κ Al₂O ₃ MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm²/Vs at E_eff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al₂O ₃/Si control devices and SiO₂/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (≤500°C) can also avoid high-κ dielectric crystallization and EOT reduction by O₂ or moisture penetration through high-κ dielectric.

Original language	English
Pages	363-371
Number of pages	9
State	Published - Oct 2003
Event	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States Duration: 12 Oct 2003 → 16 Oct 2003

Conference

Conference	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Country/Territory	United States
City	Orlando, FL.
Period	12/10/03 → 16/10/03

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Chin, A., Yu, D. S., Wu, C. H., Huang, C. H., & Chen, W. J. (2003). High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers. 363-371. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Chin, Albert ; Yu, D. S. ; Wu, C. H. et al. / High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.9 p.

@conference{d754cddddd2044d6a307dfd852a9ab90,

title = "High hole mobility of Al2O3 MOSFETSs on dislocation free Ge-on-Insulator wafers",

abstract = "The much degraded mobility, high-κ dielectric crystallization, and EOT reduction after processing are the primary limitations of high-κ gate dielectric MOSFETs. We have fabricated the high-κ Al2O 3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm2/Vs at Eeff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O 3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (≤500°C) can also avoid high-κ dielectric crystallization and EOT reduction by O2 or moisture penetration through high-κ dielectric.",

author = "Albert Chin and Yu, {D. S.} and Wu, {C. H.} and Huang, {C. H.} and Chen, {W. J.}",

year = "2003",

month = oct,

language = "English",

pages = "363--371",

note = "Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ; Conference date: 12-10-2003 Through 16-10-2003",

}

Chin, A, Yu, DS, Wu, CH, Huang, CH & Chen, WJ 2003, 'High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers', Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States, 12/10/03 - 16/10/03 pp. 363-371.

High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers. / Chin, Albert; Yu, D. S.; Wu, C. H. et al.
2003. 363-371 Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High hole mobility of Al2O3 MOSFETSs on dislocation free Ge-on-Insulator wafers

AU - Chin, Albert

AU - Yu, D. S.

AU - Wu, C. H.

AU - Huang, C. H.

AU - Chen, W. J.

PY - 2003/10

Y1 - 2003/10

N2 - The much degraded mobility, high-κ dielectric crystallization, and EOT reduction after processing are the primary limitations of high-κ gate dielectric MOSFETs. We have fabricated the high-κ Al2O 3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm2/Vs at Eeff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O 3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (≤500°C) can also avoid high-κ dielectric crystallization and EOT reduction by O2 or moisture penetration through high-κ dielectric.

AB - The much degraded mobility, high-κ dielectric crystallization, and EOT reduction after processing are the primary limitations of high-κ gate dielectric MOSFETs. We have fabricated the high-κ Al2O 3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm2/Vs at Eeff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O 3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (≤500°C) can also avoid high-κ dielectric crystallization and EOT reduction by O2 or moisture penetration through high-κ dielectric.

UR - http://www.scopus.com/inward/record.url?scp=3042854484&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3042854484

SP - 363

EP - 371

T2 - Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues

Y2 - 12 October 2003 through 16 October 2003

ER -

Chin A, Yu DS, Wu CH, Huang CH, Chen WJ. High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers. 2003. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

High hole mobility of Al₂O₃ MOSFETSs on dislocation free Ge-on-Insulator wafers

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