High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

P. M. Enquist; J. A. Hutchby; Mau-Chung Chang; P. M. Asbeck; N. H. Sheng; J. A. Higgins

doi:10.1049/el:19890755

High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

P. M. Enquist, J. A. Hutchby, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, J. A. Higgins

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Base doping densities near 10²⁰cm^-3 and emitter doping densities near 7 × 10¹⁷cm^-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in f_max = 94 GHz and f_t = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.

Original language	English
Pages (from-to)	1124-1125
Number of pages	2
Journal	Electronics Letters
Volume	25
Issue number	17
DOIs	https://doi.org/10.1049/el:19890755
State	Published - 3 Aug 1989

Keywords

Bipolar devices
Epitaxy
Semiconductor devices and materials
Transistors

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10.1049/el:19890755

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title = "High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors",

abstract = "Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.",

keywords = "Bipolar devices, Epitaxy, Semiconductor devices and materials, Transistors",

author = "Enquist, {P. M.} and Hutchby, {J. A.} and Mau-Chung Chang and Asbeck, {P. M.} and Sheng, {N. H.} and Higgins, {J. A.}",

year = "1989",

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T1 - High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

AU - Enquist, P. M.

AU - Hutchby, J. A.

AU - Chang, Mau-Chung

AU - Asbeck, P. M.

AU - Sheng, N. H.

AU - Higgins, J. A.

PY - 1989/8/3

Y1 - 1989/8/3

N2 - Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.

AB - Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.

KW - Bipolar devices

KW - Epitaxy

KW - Semiconductor devices and materials

KW - Transistors

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U2 - 10.1049/el:19890755

DO - 10.1049/el:19890755

M3 - Article

AN - SCOPUS:0024715664

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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ER -

High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

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Keywords

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