High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

P. M. Enquist, J. A. Hutchby, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, J. A. Higgins

    Research output: Contribution to journalArticlepeer-review

    12 Scopus citations

    Abstract

    Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.

    Original languageEnglish
    Pages (from-to)1124-1125
    Number of pages2
    JournalElectronics Letters
    Volume25
    Issue number17
    DOIs
    StatePublished - 3 Aug 1989

    Keywords

    • Bipolar devices
    • Epitaxy
    • Semiconductor devices and materials
    • Transistors

    Fingerprint

    Dive into the research topics of 'High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors'. Together they form a unique fingerprint.

    Cite this