"High frequency" I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points

Chin-Chun Meng*, G. H. Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

"High frequency I-V" can be calculated from integrating the bias dependent r.f. transconductance gm,RF and channel conductance gds,RF in the Vgs and Vds voltage plane. To obtain circuit elements from S parameters fitting produces uncertainty in circuit elements. An approach to uniquely determine each circuit element from measured S parameters is used to obtain "high frequency" IV curve for uniform-doped MESFETs. No d.c. measurements are used in this approach because a circuit element obtained from d.c. measurement might be different from its r.f. counterpart. The small signal equivalent circuit used has eight bias dependent intrinsic elements and six bias independent extrinsic elements. Thus, Gain compression and power saturation caused by knee voltage and maximum channel current can be accurately modelled through the obtained high frequency I-V curve because the small signal equivalent circuit is valid in both linear and saturation I-V regions.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC
Pages709-711
Number of pages3
DOIs
StatePublished - 2001
Event2001 Asia-Pacific Microwave Conference - Taipei, Taiwan
Duration: 3 Dec 20016 Dec 2001

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

Conference2001 Asia-Pacific Microwave Conference
Country/TerritoryTaiwan
CityTaipei
Period3/12/016/12/01

Fingerprint

Dive into the research topics of '"High frequency" I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points'. Together they form a unique fingerprint.

Cite this