High-frequency characteristics of PMOS transistors with raised SiGe source/drain

Keyphrases

• Gate Length 100%
• PMOS 100%
• Downscaling 100%
• High-frequency Characteristics 100%
• PMOS Transistor 100%
• SiGe Source 100%
• MOSFET 50%
• Sheet Resistance 50%
• Schottky Barrier Height 50%
• RF Front-end 50%
• Parasitic Resistance 50%
• Series Resistance 50%
• Epitaxial Layers 50%
• RF Characteristics 50%
• P-channel 50%
• GaAs MESFET 50%
• Parasitic Elements 50%
• Contact Resistivity 50%
• Si MOSFET 50%
• Front-end IC 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Length 100%
• Frequency Characteristic 100%
• Gallium Arsenide 50%
• Barrier Height 50%
• Front End 50%
• Illustrates 50%
• Schottky Barrier 50%
• Parasitic Resistance 50%
• Series Resistance 50%
• Limiting Factor 50%
• Length (L) 50%
• Sheet Resistance 50%
• Epitaxial Film 50%

Material Science

• Transistor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electrical Resistivity 50%
• Gallium Arsenide 50%
• Schottky Barrier 50%
• Epitaxial Film 50%