High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

W. B. Chen; C. H. Cheng; C. W. Lin; P. C. Chen; Albert Chin

doi:10.1016/j.sse.2010.09.006

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

W. B. Chen, C. H. Cheng, C. W. Lin, P. C. Chen, Albert Chin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We fabricated high performance gate-last TaN/La₂O ₃/SiO₂ on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm²/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO₂-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

Original language	English
Pages (from-to)	64-67
Number of pages	4
Journal	Solid-State Electronics
Volume	55
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.09.006
State	Published - Jan 2011

Keywords

EOT
Ge
High-κ dielectric
Mobility

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10.1016/j.sse.2010.09.006

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title = "High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness",

abstract = "We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).",

keywords = "EOT, Ge, High-κ dielectric, Mobility",

author = "Chen, {W. B.} and Cheng, {C. H.} and Lin, {C. W.} and Chen, {P. C.} and Albert Chin",

year = "2011",

month = jan,

doi = "10.1016/j.sse.2010.09.006",

language = "English",

volume = "55",

pages = "64--67",

journal = "Solid-State Electronics",

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T1 - High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

AU - Chen, W. B.

AU - Cheng, C. H.

AU - Lin, C. W.

AU - Chen, P. C.

AU - Chin, Albert

PY - 2011/1

Y1 - 2011/1

N2 - We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

AB - We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

KW - EOT

KW - Ge

KW - High-κ dielectric

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=78149285794&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.09.006

DO - 10.1016/j.sse.2010.09.006

M3 - Article

AN - SCOPUS:78149285794

SN - 0038-1101

VL - 55

SP - 64

EP - 67

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

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Keywords

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