High extraction efficiency of GaN-based vertical-injection light-emitting diodes using distinctive indium-tin-oxide nanorod by glancing-angle deposition

Min An Tsai; Hsun Wen Wang; Peichen Yu; Hao-Chung Kuo; Shiuan-Huei Lin

doi:10.1143/JJAP.50.052102

High extraction efficiency of GaN-based vertical-injection light-emitting diodes using distinctive indium-tin-oxide nanorod by glancing-angle deposition

Min An Tsai^*, Hsun Wen Wang, Peichen Yu, Hao-Chung Kuo, Shiuan-Huei Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium-tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation.

Original language	English
Article number	052102
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	5 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.052102
State	Published - 1 May 2011

Access to Document

10.1143/JJAP.50.052102

Cite this

@article{210fb67cdbc943ae8ad7ff5a78e34fb9,

title = "High extraction efficiency of GaN-based vertical-injection light-emitting diodes using distinctive indium-tin-oxide nanorod by glancing-angle deposition",

abstract = "The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium-tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation.",

author = "Tsai, {Min An} and Wang, {Hsun Wen} and Peichen Yu and Hao-Chung Kuo and Shiuan-Huei Lin",

year = "2011",

month = may,

day = "1",

doi = "10.1143/JJAP.50.052102",

language = "English",

volume = "50",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 PART 1",

}

TY - JOUR

T1 - High extraction efficiency of GaN-based vertical-injection light-emitting diodes using distinctive indium-tin-oxide nanorod by glancing-angle deposition

AU - Tsai, Min An

AU - Wang, Hsun Wen

AU - Yu, Peichen

AU - Kuo, Hao-Chung

AU - Lin, Shiuan-Huei

PY - 2011/5/1

Y1 - 2011/5/1

N2 - The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium-tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation.

AB - The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium-tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation.

UR - http://www.scopus.com/inward/record.url?scp=79957598480&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.052102

DO - 10.1143/JJAP.50.052102

M3 - Article

AN - SCOPUS:79957598480

SN - 0021-4922

VL - 50

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 PART 1

M1 - 052102

ER -

High extraction efficiency of GaN-based vertical-injection light-emitting diodes using distinctive indium-tin-oxide nanorod by glancing-angle deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this