High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

Yang Shun Fan; Po-Tsun Liu; Chun Ching Chen; Che Chia Chang

doi:10.1149/2.0061508ssl

High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

Yang Shun Fan, Po-Tsun Liu, Chun Ching Chen, Che Chia Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO₂/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10⁴ s at 85°C. Electric-pulse-induced resistance switching test up to 10⁸ switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

Original language	English
Pages (from-to)	Q41-Q43
Journal	ECS Solid State Letters
Volume	4
Issue number	9
DOIs	https://doi.org/10.1149/2.0061508ssl
State	Published - Jan 2015

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title = "High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector",

abstract = "Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.",

author = "Fan, {Yang Shun} and Po-Tsun Liu and Chen, {Chun Ching} and Chang, {Che Chia}",

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T1 - High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

AU - Fan, Yang Shun

AU - Liu, Po-Tsun

AU - Chen, Chun Ching

AU - Chang, Che Chia

PY - 2015/1

Y1 - 2015/1

N2 - Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

AB - Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

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High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

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