High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf<italic>x</italic>Zr1-<italic>x</italic>O2

Chieh Lo, Chung Kuang Chen, Chen Fen Chang, Feng Shuo Zhang, Zong Han Lu, Tien Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We fabricated ultrathin metal–insulator–metal capacitors and compared the performance of bilayer HZO consisting of 5-nm-thick antiferroelectric HZO (Zr = 75%) and 5-nm-thick ferroelectric HZO (Zr = 40%) with that of ferroelectric HZO (10-nm-thick) and antiferroelectric HZO (10-nm-thick). The bilayer HZO exhibited advantages of both antiferroelectricity and ferroelectricity, including a high dielectric constant (58), high remnant polarization (approximately <inline-formula> <tex-math notation="LaTeX">15~mu text{C} </tex-math></inline-formula>/cm2), a low coercive field, and excellent endurance (>1010 cycles). These results suggest that bilayer HZO is a promising candidate for use in nonvolatile memory devices.

Original languageEnglish
Pages (from-to)224-227
Number of pages4
JournalIeee Electron Device Letters
Volume43
Issue number2
DOIs
StatePublished - 1 Feb 2022

Keywords

  • Capacitors
  • Fatigue
  • Grain size
  • Hafnium oxide
  • Iron
  • Nonvolatile memory
  • Zirconium

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