High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

M. H. Lo; P. M. Tu; C. H. Wang; C. W. Hung; S. C. Hsu; Y. J. Cheng; Hao-Chung Kuo; Hsiao-Wen Zan; S. C. Wang; C. Y. Chang; S. C. Huang

doi:10.1063/1.3190504

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, Hao-Chung Kuo, Hsiao-Wen Zan, S. C. Wang, C. Y. Chang, S. C. Huang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.

Original language	English
Article number	041109
Journal	Applied Physics Letters
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.3190504
State	Published - 11 Aug 2009

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title = "High efficiency light emitting diode with anisotropically etched GaN-sapphire interface",

abstract = "We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.",

author = "Lo, {M. H.} and Tu, {P. M.} and Wang, {C. H.} and Hung, {C. W.} and Hsu, {S. C.} and Cheng, {Y. J.} and Hao-Chung Kuo and Hsiao-Wen Zan and Wang, {S. C.} and Chang, {C. Y.} and Huang, {S. C.}",

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doi = "10.1063/1.3190504",

language = "English",

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T1 - High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

AU - Lo, M. H.

AU - Tu, P. M.

AU - Wang, C. H.

AU - Hung, C. W.

AU - Hsu, S. C.

AU - Cheng, Y. J.

AU - Kuo, Hao-Chung

AU - Zan, Hsiao-Wen

AU - Wang, S. C.

AU - Chang, C. Y.

AU - Huang, S. C.

PY - 2009/8/11

Y1 - 2009/8/11

N2 - We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.

AB - We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.

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U2 - 10.1063/1.3190504

DO - 10.1063/1.3190504

M3 - Article

AN - SCOPUS:68249127583

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041109

ER -

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

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