High-efficiency InGaN red micro-LEDs for visible light communication

Yu Ming Huang; Chun Yen Peng; Wen Chien Miao; Hsin Chiang; Tzu Yi Lee; Yun Han Chang; Konthoujam James Singh; Z. Daisuke Iida; Ray Hua Horng; Chi Wai Chow; Chien Chung Lin; Kazuhiro Ohkawa; Shih Chen Chen; Hao Chung Kuo

doi:10.1364/PRJ.462050

High-efficiency InGaN red micro-LEDs for visible light communication

Yu Ming Huang
, Chun Yen Peng
, Wen Chien Miao
, Hsin Chiang
, Tzu Yi Lee
, Yun Han Chang
, Konthoujam James Singh
, Z. Daisuke Iida
, Ray Hua Horng
, Chi Wai Chow
, Chien Chung Lin
, Kazuhiro Ohkawa
, Shih Chen Chen
, Hao Chung Kuo

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm². The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm². It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

Original language	English
Pages (from-to)	1978-1986
Number of pages	9
Journal	Photonics Research
Volume	10
Issue number	9
DOIs	https://doi.org/10.1364/PRJ.462050
State	Published - 1 Aug 2022

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@article{3ba896a6f7a14c0bb7fe4a90eb6f854f,

title = "High-efficiency InGaN red micro-LEDs for visible light communication",

abstract = "In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02\% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.",

author = "Huang, \{Yu Ming\} and Peng, \{Chun Yen\} and Miao, \{Wen Chien\} and Hsin Chiang and Lee, \{Tzu Yi\} and Chang, \{Yun Han\} and Singh, \{Konthoujam James\} and \{Daisuke Iida\}, Z. and Horng, \{Ray Hua\} and Chow, \{Chi Wai\} and Lin, \{Chien Chung\} and Kazuhiro Ohkawa and Chen, \{Shih Chen\} and Kuo, \{Hao Chung\}",

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year = "2022",

month = aug,

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doi = "10.1364/PRJ.462050",

language = "English",

volume = "10",

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T1 - High-efficiency InGaN red micro-LEDs for visible light communication

AU - Huang, Yu Ming

AU - Peng, Chun Yen

AU - Miao, Wen Chien

AU - Chiang, Hsin

AU - Lee, Tzu Yi

AU - Chang, Yun Han

AU - Singh, Konthoujam James

AU - Daisuke Iida, Z.

AU - Horng, Ray Hua

AU - Chow, Chi Wai

AU - Lin, Chien Chung

AU - Ohkawa, Kazuhiro

AU - Chen, Shih Chen

AU - Kuo, Hao Chung

PY - 2022/8/1

Y1 - 2022/8/1

N2 - In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

AB - In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

UR - https://www.scopus.com/pages/publications/85138332350

U2 - 10.1364/PRJ.462050

DO - 10.1364/PRJ.462050

M3 - Article

AN - SCOPUS:85138332350

SN - 2327-9125

VL - 10

SP - 1978

EP - 1986

JO - Photonics Research

JF - Photonics Research

IS - 9

ER -

High-efficiency InGaN red micro-LEDs for visible light communication

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