High-efficiency InGaN red micro-LEDs for visible light communication

Yu Ming Huang, Chun Yen Peng, Wen Chien Miao, Hsin Chiang, Tzu Yi Lee, Yun Han Chang, Konthoujam James Singh, Z. Daisuke Iida, Ray Hua Horng, Chi Wai Chow, Chien-Chung Lin, Kazuhiro Ohkawa, Shih Chen Chen, Hao Chung Kuo

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

Original languageEnglish
Pages (from-to)1978-1986
Number of pages9
JournalPhotonics Research
Volume10
Issue number9
DOIs
StatePublished - 1 Aug 2022

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