High density RF MIM capacitors using high-κ AlTaOx dielectrics

C. H. Huang; M. Y. Yang; Albert Chin; Chunxiang Zhu; M. F. Li; Dim Lee Kwong

doi:10.1109/MWSYM.2003.1210987

High density RF MIM capacitors using high-κ AlTaO_x dielectrics

C. H. Huang^*, M. Y. Yang, Albert Chin, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaO_x dielectrics were presented. A high capacitance density of 10 fF/νm² and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaO_x MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.

Original language	English
Pages (from-to)	507-510
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
DOIs	https://doi.org/10.1109/MWSYM.2003.1210987
State	Published - 18 Aug 2003
Event	2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 8 Jun 2003 → 13 Jun 2003

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title = "High density RF MIM capacitors using high-κ AlTaOx dielectrics",

abstract = "Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.",

author = "Huang, {C. H.} and Yang, {M. Y.} and Albert Chin and Chunxiang Zhu and Li, {M. F.} and Kwong, {Dim Lee}",

year = "2003",

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journal = "IEEE MTT-S International Microwave Symposium Digest",

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T1 - High density RF MIM capacitors using high-κ AlTaOx dielectrics

AU - Huang, C. H.

AU - Yang, M. Y.

AU - Chin, Albert

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Kwong, Dim Lee

PY - 2003/8/18

Y1 - 2003/8/18

N2 - Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.

AB - Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.

UR - http://www.scopus.com/inward/record.url?scp=0042665438&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2003.1210987

DO - 10.1109/MWSYM.2003.1210987

M3 - Conference article

AN - SCOPUS:0042665438

SN - 0149-645X

VL - 1

SP - 507

EP - 510

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2003 IEEE MTT-S International Microwave Symposium Digest

Y2 - 8 June 2003 through 13 June 2003

ER -

High density RF MIM capacitors using high-κ AlTaO_x dielectrics

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