High-density MIM capacitors with HfO 2 dielectrics

Tsu Hsiu Perng*, Chao-Hsin Chien, Ching Wei Chen, Peer Lehnen, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


Metal-insulator-metal (MIM) capacitors with high-k HfO2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5 × 10-9 A/cm2 and high capacitance density of ∼3.4 fF/μm2 at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO2 MIM capacitors to be Poole-Frenkel-type conduction mechanism.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalThin Solid Films
Issue numberSPEC. ISS.
StatePublished - 22 Dec 2004


  • Dielectrics
  • HfO
  • MIM capacitors


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