High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

You Chen Weng; Chin Han Chung; Cheng Jun Ma; Chih Yi Yang; Yu Pin Lan; Hao Chung Kuo; Edward Yi Chang

doi:10.1149/2162-8777/ace478

High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

You Chen Weng^*, Chin Han Chung, Cheng Jun Ma, Chih Yi Yang, Yu Pin Lan, Hao Chung Kuo, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this work, a quaternary In_0.04Al_0.63Ga_0.33N/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN:C back-barrier (BB) layer and an AlGaN/AlN superlattice (SL) buffer layer to achieve a high breakdown voltage and a high output current density was demonstrated. Compared to the conventional device adopting AlGaN as the barrier layer, the proposed device showed a better 2DEG carrier density up to 1.9 × 10¹³ cm⁻³, a higher output current density up to 1,070 mA mm⁻¹ (improved by 47%), an on-resistance (R_on) as low as 7.64 Ω mm (decreased by 26%), an off-state breakdown voltage up to 2,070 V, and an improved dynamic R_on performance (dynamic to static ratio increased to just 1.2 times at an applied drain-to-source stress voltage (V_DS,stress) of 400 V). These results indicated the great potential of the InAlGaN/GaN MIS-HEMTs on Si for high-power switching applications.

Original language	English
Article number	075003
Journal	ECS Journal of Solid State Science and Technology
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/2162-8777/ace478
State	Published - Jul 2023

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@article{e02b4e8f9cde45e4967a58d49ba9beba,

title = "High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications",

abstract = "In this work, a quaternary In0.04Al0.63Ga0.33N/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN:C back-barrier (BB) layer and an AlGaN/AlN superlattice (SL) buffer layer to achieve a high breakdown voltage and a high output current density was demonstrated. Compared to the conventional device adopting AlGaN as the barrier layer, the proposed device showed a better 2DEG carrier density up to 1.9 × 1013 cm−3, a higher output current density up to 1,070 mA mm−1 (improved by 47%), an on-resistance (Ron) as low as 7.64 Ω mm (decreased by 26%), an off-state breakdown voltage up to 2,070 V, and an improved dynamic Ron performance (dynamic to static ratio increased to just 1.2 times at an applied drain-to-source stress voltage (VDS,stress) of 400 V). These results indicated the great potential of the InAlGaN/GaN MIS-HEMTs on Si for high-power switching applications.",

author = "Weng, {You Chen} and Chung, {Chin Han} and Ma, {Cheng Jun} and Yang, {Chih Yi} and Lan, {Yu Pin} and Kuo, {Hao Chung} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",

year = "2023",

month = jul,

doi = "10.1149/2162-8777/ace478",

language = "English",

volume = "12",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "7",

}

TY - JOUR

T1 - High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

AU - Weng, You Chen

AU - Chung, Chin Han

AU - Ma, Cheng Jun

AU - Yang, Chih Yi

AU - Lan, Yu Pin

AU - Kuo, Hao Chung

AU - Chang, Edward Yi

PY - 2023/7

Y1 - 2023/7

N2 - In this work, a quaternary In0.04Al0.63Ga0.33N/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN:C back-barrier (BB) layer and an AlGaN/AlN superlattice (SL) buffer layer to achieve a high breakdown voltage and a high output current density was demonstrated. Compared to the conventional device adopting AlGaN as the barrier layer, the proposed device showed a better 2DEG carrier density up to 1.9 × 1013 cm−3, a higher output current density up to 1,070 mA mm−1 (improved by 47%), an on-resistance (Ron) as low as 7.64 Ω mm (decreased by 26%), an off-state breakdown voltage up to 2,070 V, and an improved dynamic Ron performance (dynamic to static ratio increased to just 1.2 times at an applied drain-to-source stress voltage (VDS,stress) of 400 V). These results indicated the great potential of the InAlGaN/GaN MIS-HEMTs on Si for high-power switching applications.

AB - In this work, a quaternary In0.04Al0.63Ga0.33N/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN:C back-barrier (BB) layer and an AlGaN/AlN superlattice (SL) buffer layer to achieve a high breakdown voltage and a high output current density was demonstrated. Compared to the conventional device adopting AlGaN as the barrier layer, the proposed device showed a better 2DEG carrier density up to 1.9 × 1013 cm−3, a higher output current density up to 1,070 mA mm−1 (improved by 47%), an on-resistance (Ron) as low as 7.64 Ω mm (decreased by 26%), an off-state breakdown voltage up to 2,070 V, and an improved dynamic Ron performance (dynamic to static ratio increased to just 1.2 times at an applied drain-to-source stress voltage (VDS,stress) of 400 V). These results indicated the great potential of the InAlGaN/GaN MIS-HEMTs on Si for high-power switching applications.

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U2 - 10.1149/2162-8777/ace478

DO - 10.1149/2162-8777/ace478

M3 - Article

AN - SCOPUS:85165227297

SN - 2162-8769

VL - 12

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 7

M1 - 075003

ER -

High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

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