High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology

Ming-Dou Ker; Chyh Yih Chang

doi:10.1143/JJAP.42.3377

High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology

Ming-Dou Ker^*, Chyh Yih Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (I_t2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.

Original language	English
Pages (from-to)	3377-3378
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.42.3377
State	Published - Jun 2003

Keywords

Electrostatic discharge (ESD)
Parasitic capacitance
Polysilicon diode
Radio frequency (RF)
Substrate noise

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10.1143/JJAP.42.3377

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title = "High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology",

abstract = "Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (It2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.",

keywords = "Electrostatic discharge (ESD), Parasitic capacitance, Polysilicon diode, Radio frequency (RF), Substrate noise",

author = "Ming-Dou Ker and Chang, {Chyh Yih}",

year = "2003",

month = jun,

doi = "10.1143/JJAP.42.3377",

language = "English",

volume = "42",

pages = "3377--3378",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology. / Ker, Ming-Dou; Chang, Chyh Yih.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 6 A, 06.2003, p. 3377-3378.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology

AU - Ker, Ming-Dou

AU - Chang, Chyh Yih

PY - 2003/6

Y1 - 2003/6

N2 - Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (It2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.

AB - Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (It2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.

KW - Electrostatic discharge (ESD)

KW - Parasitic capacitance

KW - Polysilicon diode

KW - Radio frequency (RF)

KW - Substrate noise

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DO - 10.1143/JJAP.42.3377

M3 - Article

AN - SCOPUS:0041880640

SN - 0021-4922

VL - 42

SP - 3377

EP - 3378

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology

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