High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

Shao Ming Yang; Jiun Jia Huango; Chao-Hsin Chien; Pei Jer Taeng; Lurng Shehng Lee; Ming Jinn Tsai; Tan Fu Lei

doi:10.1109/VTSA.2008.4530792

High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications

Shao Ming Yang^*, Jiun Jia Huango, Chao-Hsin Chien, Pei Jer Taeng, Lurng Shehng Lee, Ming Jinn Tsai, Tan Fu Lei

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the formation of CeO₂ nanocrystals on SiO₂ tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO₂) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	48-49
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530792
State	Published - 14 Aug 2008
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 21 Apr 2008 → 23 Apr 2008

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	21/04/08 → 23/04/08

Access to Document

10.1109/VTSA.2008.4530792

Cite this

Yang, S. M., Huango, J. J., Chien, C-H., Taeng, P. J., Lee, L. S., Tsai, M. J., & Lei, T. F. (2008). High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 48-49). [4530792] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530792

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title = "High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications",

abstract = "This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.",

author = "Yang, {Shao Ming} and Huango, {Jiun Jia} and Chao-Hsin Chien and Taeng, {Pei Jer} and Lee, {Lurng Shehng} and Tsai, {Ming Jinn} and Lei, {Tan Fu}",

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doi = "10.1109/VTSA.2008.4530792",

language = "English",

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series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

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Yang, SM, Huango, JJ, Chien, C-H, Taeng, PJ, Lee, LS, Tsai, MJ & Lei, TF 2008, High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530792, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 48-49, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 21/04/08. https://doi.org/10.1109/VTSA.2008.4530792

High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. / Yang, Shao Ming; Huango, Jiun Jia; Chien, Chao-Hsin et al.

2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 48-49 4530792 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yang, Shao Ming

AU - Huango, Jiun Jia

AU - Chien, Chao-Hsin

AU - Taeng, Pei Jer

AU - Lee, Lurng Shehng

AU - Tsai, Ming Jinn

AU - Lei, Tan Fu

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N2 - This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

AB - This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

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Yang SM, Huango JJ, Chien C-H, Taeng PJ, Lee LS, Tsai MJ et al. High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 48-49. 4530792. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530792