Abstract
The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.
Original language | English |
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Pages (from-to) | 1213-1216 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 46 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jun 2015 |
Event | 2015 SID International Symposium - San Jose, United States Duration: 2 Jun 2015 → 3 Jun 2015 |
Keywords
- AZTO
- RRAM
- Read margin
- Resistive switching
- Schottky diode