High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

C. S. Chang*, S. J. Chang, Y. K. Su, Cheng-Huang Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, J. K. Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.

Original languageEnglish
Pages (from-to)2208-2212
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 1 Nov 2003


  • GaN
  • Green light-emitting diode (LED)
  • Indium tin oxide (ITO)
  • Short-period superlattice (SPS)


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